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Same model may have multiple batches, images only for reference.
SQM120N03-1M5L-GE3 Real Image
Same model may have multiple batches, images only for reference.

SQM120N03-1M5L-GE3

Part No SQM120N03-1M5L-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 120A TO-263
Datasheet
SQM120N03-1M5L-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 15605pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 1.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 212093-SQM120N03-1M5L-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SQM120N03-1M5L-GE3 CAD Model

Description

The SQM120N03-1M5L-GE3 is a MOSFET manufactured by Vishay.

  • Package: TO-263
  • Power Dissipation: 375W @ Tc
  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 1.5 mOhm @ 30A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Applications: power supplies, motor control, and inverters

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5614 $51.2280
48+ $2.1017 $100.8816
74+ $2.0360 $150.6640
102+ $1.9704 $200.9808
132+ $1.9047 $251.4204
176+ $1.7076 $300.5376
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 800 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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