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SQM120N04-1M7_GE3

Part No SQM120N04-1M7_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 310 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17350 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SQM120
Other Names SQM120N04-1M7-GE3
Standard Package 800
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277820-SQM120N04-1M7_GE3
Ultra Librarian 3D Model Ultra Librarian SQM120N04-1M7_GE3 CAD Model

Description

The SQM120N04-1M7_GE3 is an N-channel MOSFET transistor that is ideal for use in various automotive electronic applications.

  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 120A @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250μA
  • Power Dissipation: 300W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 17350 pF @ 25 V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.1493 $57.0451
15+ $6.6866 $100.2990
24+ $6.4777 $155.4648
32+ $6.2687 $200.5984
42+ $6.0598 $254.5116
56+ $5.4329 $304.2424
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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