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Same model may have multiple batches, images only for reference.
SQM40081EL_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQM40081EL_GE3

Part No SQM40081EL_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 50A TO263 / P-Channel 40 V 50A (Tc) 107W (Tc) Surface Mount TO-263 (D²Pak)
Datasheet
SQM40081EL_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9950 pF @ 25 V
Power Dissipation (Max) 107W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SQM40081
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQM40081EL_GE3DKR,SQM40081EL_GE3CT,SQM40081EL_GE3TR
Standard Package 800
Win Source Part Number 964044-SQM40081EL_GE3
Ultra Librarian 3D Model Ultra Librarian SQM40081EL_GE3 CAD Model

Description

The SQM40081EL_GE3 is a P-channel MOSFET transistor designed by Vishay Siliconix.

  • Series: TrenchFET
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-263-3, D²Pak
  • Leads: 2
  • Voltage (Vdss): 40V
  • Current (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
  • HTSUS Code: 8541.29.0095
  • EAR99: Yes

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