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Same model may have multiple batches, images only for reference.
SQM60N06-15_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQM60N06-15_GE3

Part No SQM60N06-15_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 56A TO263
Datasheet
SQM60N06-15_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 2480pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101749-SQM60N06-15_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQM60N06-15_GE3 CAD Model

Description

The Vishay SQM60N06-15_GE3 is an N-Channel MOSFET manufactured by Vishay.

  • Channel Type: N-Channel
  • Maximum Power Dissipation: 107W (Tc)
  • Drive Voltage: 10V
  • Package: TO-263 (D2Pak)
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 56A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 250μA
  • Maximum Gate Charge: 50nC @ 10V
  • Maximum Input Capacitance: 2480pF @ 25V
  • Maximum Rds On @ Id,Vgs: 15 mOhm @ 30A, 10V
  • Application: Discrete Semiconductor Products

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