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SQP90142E_GE3

Part No SQP90142E_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 78.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SQP90142
Other Names SQP90142E_GE3DKR,SQP90142E_GE3CT,SQP90142E_GE3DKRINACTIVE,SQP90142E_GE3TR,SQP90142E_GE3TR,SQP90142E_GE3DKR,SQP90142E_GE3CT,SQP90142E_GE3TRINACTIVE
Standard Package 1
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277809-SQP90142E_GE3
Ultra Librarian 3D Model Ultra Librarian SQP90142E_GE3 CAD Model

Description

The Vishay SQP90142E_GE3 is an N-channel MOSFET with a drain to source voltage of 200V and a continuous drain current of 78.5A @ 25°C.

  • Drain to Source Voltage: 200V
  • Continuous Drain Current: 78.5A @ 25°C
  • Maximum Rds On: 15.3mOhm @ 20A, 10V
  • Vgs(th): 3.5V @ 250µA
  • Power Dissipation: 250W (Tc)
  • Mounting Type: Through-Hole
  • Package/Case: TO-220-3
  • Gate Charge: 85 nC @ 10V
  • Input Capacitance: 4200 pF @ 25V
  • Maximum Vgs: ±20V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Ideal for: Use in discrete semiconductor products
  • Popularity Rating: Medium
  • MSL Level: 1 (unlimited)
  • HTSUS: 8541.29.0095
  • Other Part Numbers: SQP90142E_GE3DKR, SQP90142E_GE3CT, SQP90142E_GE3DKRINACTIVE, SQP90142E_GE3TR, and SQP90142E_GE3TRINACTIVE

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