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SQS460ENW-T1_GE3

Part No SQS460ENW-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 755 pF @ 25 V
Power Dissipation (Max) 39W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8W
Package / Case PowerPAK® 1212-8W
Base Product Number SQS460
Other Names SQS460ENW-T1_GE3DKR,SQS460ENW-T1_GE3CT,SQS460ENW-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277783-SQS460ENW-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQS460ENW-T1_GE3 CAD Model

Description

The Vishay SQS460ENW-T1_GE3 is an N-channel MOSFET transistor that comes in a PowerPAK® 1212-8W package.

  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Power Dissipation (max): 39W (Tc)
  • Gate Charge (Qg) (max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (max) @ Vds: 755 pF @ 25 V
  • Vgs (max): ±20V
  • Temperature Range - Operating: -55°C ~ 175°C (TJ)
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1642 $52.3890
105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 44,465 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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