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Same model may have multiple batches, images only for reference.
SQS966ENW-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQS966ENW-T1_GE3

Part No SQS966ENW-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQS966ENW-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Rds On (Max) @ Id, Vgs 36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 572pF @ 25V
Power - Max 27.8W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case PowerPAK® 1212-8W Dual
Supplier Device Package PowerPAK® 1212-8W Dual
Base Product Number SQS966
Other Names SQS966ENW-T1_GE3CT,SQS966ENW-T1_GE3DKR,SQS966ENW-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1278533-SQS966ENW-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQS966ENW-T1_GE3 CAD Model

Description

The SQS966ENW-T1_GE3 from Vishay Siliconix is a dual N-channel trenchFET used in electronic devices.

  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 6A @ 25°C
  • Rds On: 36mOhm @ 1.25A and 10V
  • Vgs(th): 2.5V @ 250μA
  • Maximum Power: 27.8W @ Tc
  • Gate Charge (Qg): 8.8nC @ 10V
  • Input Capacitance (Ciss): 572pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8045 $52.2925
155+ $0.6602 $102.3310
235+ $0.6395 $150.2825
325+ $0.6189 $201.1425
420+ $0.5983 $251.2860
560+ $0.5364 $300.3840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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