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SUD50N02-04P-E3

Part No SUD50N02-04P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 50A 3-Pin(2+Tab) DPAK / MOSFET N-CH 20V 50A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 60nC @ 4.5V
Max Input Capacitance 5000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 8.3W (Ta), 136W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 120186-SUD50N02-04P-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SUD50N02-04P
Introduction Date May 13, 2003
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SUD50N02-04P-E3 CAD Model

Description

The SUD50N02-04P-E3 is an N-channel MOSFET from Vishay that is designed for use in various applications.

  • Manufacturer: Vishay
  • Channel Type: N-channel
  • Power Dissipation: Up to 8.3W (Ta), 136W (Tc)
  • Continuous Drain Current: Up to 50A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 4.3 mOhm @ 20A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
410+ $0.1409 $57.7690
1,000+ $0.1155 $115.5000
1,550+ $0.1120 $173.6000
2,130+ $0.1086 $231.3180
2,750+ $0.1051 $289.0250
3,705+ $0.0936 $346.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,800 pieces
MOQ: 410 pcs
Order Increment : 1 pcs
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