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SUD50N04-09H

Part No SUD50N04-09H
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 40-V (D-S), 175 °C MOSFET
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Rohs State rohs
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Manufacturer Vishay
Win Source Part Number 1262490-SUD50N04-09H
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD50N04-09H CAD Model

Description

The SUD50N04-09H is a N-Channel Power MOSFET manufactured by Vishay. It is designed for high-efficiency power switching applications. This MOSFET offers low on-resistance and fast switching speeds, making it suitable for DC-DC converters, motor control, and load switching applications.

Applications:

  • DC-DC converters for power supplies and battery chargers.
  • Motor control circuits for driving electric motors in various applications.
  • Load switches for controlling power to various loads in electronic systems.
  • Synchronous rectification in power supplies.
  • Battery management systems for protecting and optimizing battery performance.

Features:

  • Low on-resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • Fast switching speed: Enables high-frequency operation.
  • High avalanche energy: Provides robustness against voltage spikes.
  • Logic level gate drive: Allows for direct interface with microcontrollers and other logic devices.
  • Lead-free and RoHS compliant: Meets environmental regulations.
  • N-Channel enhancement mode MOSFET.

Benefits:

  • Improved energy efficiency: Low on-resistance reduces power dissipation.
  • Reduced heat generation: Lower power losses minimize the need for heat sinking.
  • Enhanced system performance: Fast switching speed enables high-frequency operation.
  • Increased reliability: High avalanche energy provides protection against voltage transients.
  • Simplified circuit design: Logic level gate drive simplifies interfacing with control circuitry.

Additional Details:

The SUD50N04-09H MOSFET typically has a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) rating dependent on the case temperature, often up to 50A or more when properly heat sinked. The gate threshold voltage (VGS(th)) is typically around 2V, making it compatible with logic-level signals. It's commonly available in packages such as TO-252 or TO-263.

Proper gate driving techniques and thermal management are crucial for maximizing the MOSFET's performance and reliability. Refer to the manufacturer's datasheet for detailed specifications, application notes, and recommended layout guidelines.

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