The Vishay SUM110N10-09-E3 MOSFET is a high-performance N-channel polarity electronic component that comes with a drain-source breakdown voltage of 100V and a continuous drain current of 110A @ 25°C.

• Maximum Rds On: 9.5 mOhm @ Id and Vgs of 30A and 10V respectively
• Maximum Gate-Source Voltage: ±20V
• Drive Voltage: 10V
• Power Dissipation: up to 3.75W (Ta) or 375W (Tc) of power
• Maximum Input Capacitance: 6700pF @ 25V
• Maximum Gate Charge: 160nC @ 10V
• Package: TO-263 (D2Pak) package
• Suitable for: use in discrete semiconductor products
• Manufacturer: Vishay
• Status: an active component in the market
• Popularity: high-popularity component
• Estimated EOL Date: 2027