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Same model may have multiple batches, images only for reference.
SUM36N20-54P-E3 Vishay
Same model may have multiple batches, images only for reference.

SUM36N20-54P-E3

Part No SUM36N20-54P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 36A D2PAK
Datasheet
SUM36N20-54P-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 127nC @ 15V
Max Input Capacitance 3100pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.12W (Ta), 166W (Tc)
Maximum Rds On at Id,Vgs 53 mOhm @ 20A, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 136010-SUM36N20-54P-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUM36N20-54P-E3 CAD Model

Description

Its supply and demand status is limited.

  • Manufacturer: Vishay
  • Package: TO-263 (D2Pak) package
  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 36A (Tc)
  • Maximum Rds On at Id, Vgs: 53 mOhm @ 20A, 15V
  • Suitable for: use in various electronic circuits that require a MOSFET
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Gate Charge: 127nC @ 15V
  • Overall: reliable and cost-effective option for electronic circuit designers

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