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SUM50020E-GE3

Part No SUM50020E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR),Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 128 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11150 pF @ 30 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SUM50020
Other Names SUM50020E-GE3,SUM50020E-GE3DKR,SUM50020E-GE3CT,SUM50020E-GE3TR,SUM50020E-GE3DKRINACTIVE,SUM50020E-GE3DKR
Standard Package 800
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277540-SUM50020E-GE3
Ultra Librarian 3D Model Ultra Librarian SUM50020E-GE3 CAD Model

Description

The Vishay TrenchFET® 1277540-SUM50020E-GE3 is an N-Channel MOSFET packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB case.

  • Drain to Source Voltage (Vdss): 60 V
  • Continuous Drain Current (Id): 120A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supplier Device Package: TO-263 (D2Pak)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

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