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Same model may have multiple batches, images only for reference.
SUP50N10-21P-GE3 Vishay
Same model may have multiple batches, images only for reference.

SUP50N10-21P-GE3

Part No SUP50N10-21P-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SUP50N10-21P-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2055 pF @ 50 V
Power Dissipation (Max) 3.1W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SUP50
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277488-SUP50N10-21P-GE3
Ultra Librarian 3D Model Ultra Librarian SUP50N10-21P-GE3 CAD Model

Description

The SUP50N10-21P-GE3 N-channel MOSFET transistor from Vishay Siliconix is a high-quality product with a TO-220-3 package type.

  • Drain to Source Voltage (Vdss): 100 V
  • Current @ 25°C: 50A (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Power Dissipation: 3.1W (Ta), 125W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 50 V
  • Vgs (Max): ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6951 $59.2922
53+ $2.2114 $117.2042
81+ $2.1422 $173.5182
112+ $2.0731 $232.1872
145+ $2.0041 $290.5945
193+ $1.7967 $346.7631
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Availability: 3,880 pieces
MOQ: 22 pcs
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