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Same model may have multiple batches, images only for reference.
SUP60030E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUP60030E-GE3

Part No SUP60030E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SUP60030E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 141 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7910 pF @ 40 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SUP60030
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277610-SUP60030E-GE3
Ultra Librarian 3D Model Ultra Librarian SUP60030E-GE3 CAD Model

Description

The SUP60030E-GE3 is a N-channel MOSFET transistor from the TrenchFET series.

  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 120A (Tc)
  • Maximum Rds On: 3.4mOhm @ 30A, 10V
  • Gate Charge: 141nC @ 10Vgs
  • Input Capacitance: 7910pF @ 40Vds
  • Vgs(th): 4V @ 250μA
  • Package: TO-220-3
  • Temperature Range: -55°C to 175°C (TJ)
  • Supplied by: Vishay Siliconix
  • ECCN: EAR99

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