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SUP70N03-09BP-E3

Part No SUP70N03-09BP-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 70A TO220AB  /  N-Channel 30 V 70A (Tc) 93W (Tc) Through Hole TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
Power Dissipation (Max) 93W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SUP70
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SUP70N0309BPE3,SUP70N03-09BP-E3CT,SUP70N03-09BP-E3TR-ND,SUP70N03-09BP-E3TR,SUP70N03-09BP-E3TRINACTIVE,SUP70N03-09BP-E3CT-ND
Standard Package 500
Win Source Part Number 1119616-SUP70N03-09BP-E3
Ultra Librarian 3D Model Ultra Librarian SUP70N03-09BP-E3 CAD Model

Description

The SUP70N03-09BP-E3 is a MOSFET transistor that is designed for use in a variety of electronic applications.

  • Manufacturer: Vishay
  • FET Type: N-channel
  • Drain to Source Voltage: 30V
  • Maximum Rds On: 9mOhm @ 30A and 10V
  • Gate Charge: 19 nC @ 5 V
  • Mounting Style: Through-hole
  • Package: TO-220-3
  • Maximum Power Dissipation: 93W
  • Operating Temperature Range: -55°C to 175°C

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