The SUP85N03-3m6P is an N-Channel power MOSFET from Vishay Siliconix, designed for high-efficiency power switching and load management applications. This device boasts ultra-low on-resistance and optimized gate charge, enabling superior performance in demanding electronic circuits.

Applications

• Synchronous rectification
• DC-DC converters
• Power management in portable devices
• Load switching
• Battery management systems

Features

• N-Channel MOSFET
• Ultra-low on-resistance (RDS(on))
• Optimized gate charge (Qg)
• High avalanche energy rating
• Fast switching speed
• Lead (Pb)-free construction

Benefits

• Maximizes efficiency in power conversion circuits.
• Minimizes power losses and heat dissipation.
• Enhances system reliability with a high avalanche energy rating.
• Provides faster switching speeds for high-frequency applications.
• Environmentally friendly due to lead-free construction.

Additional Details

The SUP85N03-3m6P features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 85A. Its ultra-low on-resistance, typically 3.6 mΩ at VGS = 10V, significantly reduces conduction losses. The optimized gate charge minimizes switching losses, further enhancing efficiency. The device is available in a PowerPAK® SO-8 package, which provides excellent thermal performance. This MOSFET is designed for synchronous rectification in DC-DC converters, where its ultra-low on-resistance and fast switching speed contribute to significant efficiency improvements. It is also suitable for load switching and power management in portable devices, where energy efficiency is critical. The high avalanche energy rating ensures robust performance in demanding applications. It provides a robust and highly efficient solution for various power management and switching applications.