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Same model may have multiple batches, images only for reference.
SUP90N04-3M3P-GE3 Vishay
Same model may have multiple batches, images only for reference.

SUP90N04-3M3P-GE3

Part No SUP90N04-3M3P-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO-220AB
Datasheet
SUP90N04-3M3P-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 131nC @ 10V
Max Input Capacitance 5286pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1104138-SUP90N04-3M3P-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SUP90N04-3M3P-GE3 CAD Model

Description

The Vishay MOSFET is a high-performance N-Channel transistor that is suitable for use in discrete semiconductor products.

  • Type: N-Channel transistor
  • Maximum Power Dissipation: 3.1W (Ta) and 125W (Tc)
  • Ideal for: applications that require high power output
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 90A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 131nC @ 10V
  • Maximum Rds On at Id,Vgs: 3.3 mOhm @ 22A, 10V
  • Package: TO-220AB
  • Mounting: through-hole
  • Suitable for: power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5015 $60.0600
95+ $1.2324 $117.0780
150+ $1.1943 $179.1450
200+ $1.1550 $231.0000
260+ $1.1169 $290.3940
350+ $1.0014 $350.4900
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Availability: 1,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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