The TP0610N is a P-Channel enhancement mode MOSFET from Vishay Semiconductors. This device is designed for low voltage, high-speed switching applications where power efficiency is crucial. Its key characteristics include a low threshold voltage, fast switching speed, and a small footprint, making it suitable for portable and battery-powered devices.

Applications

• DC-DC converters
• Load switching
• Power management in portable devices
• Solid-state relays
• Battery-powered applications

Features

• P-Channel Enhancement Mode
• Low Threshold Voltage: Ensures easy gate drive.
• Fast Switching Speed: Minimizes switching losses.
• Low Input Capacitance: Reduces drive requirements.
• Small Footprint: Enables high-density designs.
• Halogen-Free According to IEC 61249-2-21 Definition

Benefits

• Increased Power Efficiency: Low on-resistance reduces conduction losses, improving overall efficiency.
• Simplified Gate Drive: Low threshold voltage simplifies the gate drive circuitry, reducing component count and cost.
• Compact Design: Small footprint allows for more compact and efficient designs, especially in portable devices.
• Improved Thermal Performance: Efficient thermal characteristics allow for reliable operation at higher temperatures.
• Reliable Switching: Fast switching speeds ensure reliable and efficient switching performance.

Technical Specifications

The TP0610N features a drain-source voltage (Vds) of -60V and a continuous drain current (Id) of -0.36A. The typical gate threshold voltage (Vgs(th)) is -1.8V. The on-resistance (Rds(on)) is typically 3.5 Ohms at a gate-source voltage of -10V. The device is available in a SOT-23 package. The operating and storage temperature range is -55°C to +150°C.