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Same model may have multiple batches, images only for reference.
VS-FB180SA10P Real Image
Same model may have multiple batches, images only for reference.

VS-FB180SA10P

Part No VS-FB180SA10P
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 180A SOT-227 / N-Channel 100 V 180A (Tc) 480W (Tc) Chassis Mount SOT-227
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay General Semiconductor - Diodes Division
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 180A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10700 pF @ 25 V
Power Dissipation (Max) 480W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Package / Case SOT-227-4, miniBLOC
Base Product Number FB180
Standard Package 160
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351944-VS-FB180SA10P
Ultra Librarian 3D Model Ultra Librarian VS-FB180SA10P CAD Model

Description

The Vishay General Semiconductor - Diodes Division FB180 MOSFET is an electronic component that is now obsolete.

  • MOSFET Type: N-Channel
  • Drain to Source Voltage (Vdss): 100 V
  • Power Dissipation (Max): 480W (Tc)
  • Package Type: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
  • Voltage Drive (Max Rds On, Min Rds On): 10V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
  • ECCN: EAR99.29.0095

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