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Same model may have multiple batches, images only for reference.
ALD1117SAL Real Image
Same model may have multiple batches, images only for reference.

ALD1117SAL

Part No ALD1117SAL
Manufacturer Advanced Linear Devices Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 10.6V 8SOIC
Datasheet
ALD1117SAL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Advanced Linear Devices Inc.
Packaging Tube/Rail
Status Active
FET Type 2 P-Channel (Dual) Matched Pair
FET Feature Standard
Drain-Source Breakdown Voltage 10.6V
Maximum Rds On at Id,Vgs 1800 Ohm @ 5V
Gate-Source Threshold Voltage 1V @ 1μA
Max Input Capacitance 3pF @ 5V
Maximum Power Dissipation 500mW
Temperature Range - Operating 0°C to 70°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 1051997-ALD1117SAL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ALD1117SAL CAD Model

Description

The ALD1117SAL is a dual P-channel matched pair FET that is mainly used for discrete semiconductor products.

  • Product: FET
  • Configuration: Dual P-Channel Matched Pair
  • Application: Discrete Semiconductor Products
  • Package: 8-SOIC
  • Operating Temperature: 0°C to 70°C
  • Maximum Power Dissipation: 500mW
  • Drain-Source Breakdown Voltage: 10.6V
  • Popularity: Medium
  • Supply and Demand: Sufficient

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39+ $2.9995 $116.9805
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143+ $2.4371 $348.5053
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Availability: 4,700 pieces
MOQ: 16 pcs
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