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Same model may have multiple batches, images only for reference.
AOL1206 Real Image
Same model may have multiple batches, images only for reference.

AOL1206

Part No AOL1206
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8ULTRASO
Datasheet
AOL1206 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 23.5nC @ 10V
Max Input Capacitance 1670pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.7W (Ta), 62W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package UltraSO-8
Dimension 3-PowerSMD, Flat Leads
Win Source Part Number 1016984-AOL1206
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOL1206 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-performance N-Channel power transistor that is designed for use in various electronic applications.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 16A @ 25°C
  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Maximum Input Capacitance: 1670pF @ 15V
  • Case/Package: UltraSO-8 (3-PowerSMD with flat leads)
  • Power Dissipation (Ta): 2.7W
  • Power Dissipation (Tc): 62W
  • Maximum Rds On: 6 mOhm @ 20A, 10V

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