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Same model may have multiple batches, images only for reference.
AON5810 Real Image
Same model may have multiple batches, images only for reference.

AON5810

Part No AON5810
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 7.7A 6DFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.7A
Maximum Rds On at Id,Vgs 18 mOhm @ 7.7A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 13.1nC @ 4.5V
Max Input Capacitance 1360pF @ 10V
Maximum Power Dissipation 1.6W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DFN-EP (2x5)
Win Source Part Number 1017023-AON5810
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AON5810 CAD Model

Description

The AON5810 is a dual N-Channel MOSFET with common drain configuration and logic level gate.

  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Package: 6-DFN-EP (2x5)
  • Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation: 1.6W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 7.7A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 13.1nC @ 4.5V
  • Maximum Input Capacitance: 1360pF @ 10V
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 7.7A, 4.5V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2287 $58.3185
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,320+ $0.1756 $231.7920
1,705+ $0.1698 $289.5090
2,275+ $0.1525 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 352,400 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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