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AOT11N60L

Part No AOT11N60L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1990pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 272W (Tc)
Maximum Rds On at Id,Vgs 650 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017168-AOT11N60L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOT11N60L CAD Model

Description

The AOT11N60L is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Maximum Power Dissipation: 272W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 11A (Tc)
  • Maximum Rds On: 650 mOhm @ 5.5A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 37nC @ 10V
  • Package: TO-220-3
  • Mounting Type: Through Hole
  • Technology: N-Channel
  • Polarity: N-Channel
  • Drive Voltage: 10V
  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)

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