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Same model may have multiple batches, images only for reference.
AOT14N50 Real Image
Same model may have multiple batches, images only for reference.

AOT14N50

Part No AOT14N50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 14A TO-220
Datasheet
AOT14N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 2297pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 278W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017176-AOT14N50
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOT14N50 CAD Model

Description

The MOSFET is a high-performance N-channel device manufactured by Alpha & Omega Semiconductor Inc.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 14A (Tc) @ 25°C
  • Mounting: TO-220 package
  • Maximum Power Dissipation: 278W (Tc)
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 7A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 51nC @ 10V
  • Maximum Input Capacitance: 2297pF @ 25V
  • Supply and Demand Status: sufficient

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Quantity Unit Price Ext. Price
105+ $0.4948 $51.9540
250+ $0.4060 $101.5000
385+ $0.3933 $151.4205
530+ $0.3806 $201.7180
680+ $0.3680 $250.2400
910+ $0.3299 $300.2090
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