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AOT2618L Real Image1 AOT2618L Real Image2
Same model may have multiple batches, images only for reference.
AOT2618L Real Image1 AOT2618L Real Image2
AOT2618L Real Image1 AOT2618L Real Image2
Same model may have multiple batches, images only for reference.

AOT2618L

Part No AOT2618L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 7A TO220
Datasheet
AOT2618L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 7A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 950pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 41.5W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017199-AOT2618L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOT2618L CAD Model

Description

The AOT2618L is an N-channel MOSFET power transistor manufactured by Alpha & Omega Semiconductor Inc.

  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Transistor Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 7A (Ta), 23A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Rds On: 19 mOhm @ 20A, 10V
  • Package: TO-220-3
  • Mounting Type: Through-Hole

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