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Same model may have multiple batches, images only for reference.
AOT9N70 Real Image
Same model may have multiple batches, images only for reference.

AOT9N70

Part No AOT9N70
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 9A TO220
Datasheet
AOT9N70 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1630pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 236W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 078202-AOT9N70
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOT9N70 CAD Model

Description

AOT9N70 - Efficient Power MOSFET

The AOT9N70 is designed to meet the demands of high-efficiency power systems, offering excellent thermal performance and fast switching capabilities.

Features and Benefits

  • V<sub>DS rating of 700V suitable for robust applications
  • Optimized for low gate charge and low on-resistance
  • Reliable performance under stressful conditions
  • High-speed switching improves system efficiency

Applications

  • AC-DC converters
  • Telecom power supplies
  • Charging stations
  • Battery management systems
  • Smart grid technology

The AOT9N70 is ideal for applications that require reliable operations over prolonged periods.

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