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Same model may have multiple batches, images only for reference.
AOTF11S60 Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOTF11S60

Part No AOTF11S60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220F
Datasheet
AOTF11S60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.1V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 545pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 399 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 1017245-AOTF11S60
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian AOTF11S60 CAD Model

Description

The AOTF11S60 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A @ 25°C
  • Maximum Rds On @ Id, Vgs: 399 mOhm @ 3.8A, 10V
  • Gate-Source Threshold Voltage: 4.1V @ 250μA
  • Maximum Gate Charge: 11nC @ 10V
  • Applications: power supplies, motor control, and lighting
  • Package: TO-220-3F
  • Power Dissipation: 38W (Tc)
  • Quantity: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9099 $58.9188
29+ $4.0286 $116.8294
45+ $3.9027 $175.6215
62+ $3.7769 $234.1678
80+ $3.6510 $292.0800
106+ $3.2733 $346.9698
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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