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AOTF12N60

Part No AOTF12N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 2100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 137960-AOTF12N60
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AOTF12N60 CAD Model

Description

AOTF12N60: Efficient High-Voltage MOSFET

The AOTF12N60 is engineered for high-voltage applications, offering efficiency and reliability for engineers in search of durable electronic components. Suitable for inverters, flyback converters, and other high-voltage equipment.
Features and Benefits:

  • High voltage rating
  • Low gate charge
  • Excellent RDS(on) performance

Applications:

  • Inverter systems
  • Flyback converters
  • Power factor correction circuits (PFC)

Additional Details: Built to withstand the challenges of high-voltage environments, the AOTF12N60 integrates low gate charge and impressive RDS(on) characteristics for optimized power efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3615 $57.8400
390+ $0.2968 $115.7520
605+ $0.2876 $173.9980
830+ $0.2784 $231.0720
1,075+ $0.2691 $289.2825
1,440+ $0.2414 $347.6160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,600 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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