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Same model may have multiple batches, images only for reference.
AOTF13N50 Real Image
Same model may have multiple batches, images only for reference.

AOTF13N50

Part No AOTF13N50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 13A TO220F
Datasheet
AOTF13N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1633pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 510 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 1017250-AOTF13N50
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOTF13N50 CAD Model

Description

The AOTF13N50 MOSFET by Alpha & Omega Semiconductor Inc. is a through-hole N-channel polarity transistor.

  • Power Dissipation: 50W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 13A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 37nC @ 10V
  • Maximum Input Capacitance: 1633pF @ 25V
  • Maximum Rds On: 510 mOhm @ 6.5A, 10V
  • Case: TO-220-3F
  • Supply and Demand Status: Sufficient

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90+ $1.1310 $101.7900
140+ $1.0956 $153.3840
190+ $1.0603 $201.4570
245+ $1.0249 $251.1005
330+ $0.9189 $303.2370
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