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Same model may have multiple batches, images only for reference.
AOTF2618L Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOTF2618L

Part No AOTF2618L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 16A TO220F
Datasheet
AOTF2618L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 7A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 950pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 23.5W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 1017265-AOTF2618L
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Portable Devices, Medical, Industrial
Ultra Librarian 3D Model Ultra Librarian AOTF2618L CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOTF2618L is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 7A @ 25°C
  • Maximum Rds On: 19 mOhm @ 20A and 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 950pF @ 30V
  • Power Dissipation: 2.1W (Ta) and 23.5W (Tc)
  • Package: TO-220-3F

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Quantity Unit Price Ext. Price
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190+ $0.6125 $116.3750
295+ $0.5934 $175.0530
405+ $0.5742 $232.5510
525+ $0.5551 $291.4275
700+ $0.4976 $348.3200
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