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Same model may have multiple batches, images only for reference.
AOTF4N90 Real Image
Same model may have multiple batches, images only for reference.

AOTF4N90

Part No AOTF4N90
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 4A TO220F
Datasheet
AOTF4N90 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 1017280-AOTF4N90
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOTF4N90 CAD Model

Description

The AOTF4N90 MOSFET by Alpha & Omega Semiconductor Inc. is a through-hole N-channel polarity transistor.

  • Maximum Power Dissipation: 37W (Tc)
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current @ 25°C: 4A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Input Capacitance: 880pF @ 25V
  • Maximum Rds On: 3.6 Ohm @ 2A, 10V
  • Category: Discrete Semiconductor Products
  • Package: TO-220-3F
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 109,900 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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