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Same model may have multiple batches, images only for reference.
AOTF600A60L Real Image
Same model may have multiple batches, images only for reference.

AOTF600A60L

Part No AOTF600A60L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 8A TO220F / N-Channel 600 V 8A (Tj) 27.5W (Tc) Through Hole TO-220F
Datasheet
AOTF600A60L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Alpha & Omega Semiconductor Inc.
Series aMOS5™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 608 pF @ 100 V
Power Dissipation (Max) 27.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Base Product Number AOTF600
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 785-AOTF600A60L
Standard Package 1,000
Win Source Part Number 977044-AOTF600A60L
Ultra Librarian 3D Model Ultra Librarian AOTF600A60L CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOTF600A60L is a MOSFET (Metal Oxide) transistor with an N-Channel FET type.

  • Drain-to-Source Voltage: 600V
  • Continuous Drain Current: 8A @ 25°C
  • Maximum Rds On: 600mOhm @ 2.1A and 10V
  • Gate Charge: 11.5 nC @ 10V
  • Packaging: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
  • Input Capacitance (Ciss): 608 pF @ 100V
  • Vgs (Max): ±20V
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095

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