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AOTF7S65L

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Part No	AOTF7S65L
Manufacturer	Alpha & Omega Semiconductor Inc.
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Alpha & Omega Semiconductor Inc.
Series	aMOS™
Package	Bulk
Product Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	650mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.2 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	434 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	27W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack
Base Product Number	AOTF7
REACH Status	REACH Unaffected
Win Source Part Number	1377826-AOTF7S65L
Ultra Librarian 3D Model	Ultra Librarian AOTF7S65L CAD Model

Alternative Products

Description

The AOTF7S65L is a N-channel MOSFET transistor from Alpha & Omega Semiconductor Inc.

Series: aMOS™
Package: TO-220-3 Full Pack
Drain to Source Voltage (Vdss): 650V
Continuous Drain Current (Id): 7A
On-Resistance (Rds On): 650mOhm
Gate Threshold Voltage (Vgs(th)): 4V
Maximum Gate Charge (Qg): 9.2nC
Maximum Power Dissipation: 27W
Operating Temperature: -55°C to 150°C

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