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AOWF11S60 Real Image1 AOWF11S60 Real Image2
Same model may have multiple batches, images only for reference.
AOWF11S60 Real Image1 AOWF11S60 Real Image2
AOWF11S60 Real Image1 AOWF11S60 Real Image2
Same model may have multiple batches, images only for reference.

AOWF11S60

Part No AOWF11S60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO262F
Datasheet
AOWF11S60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.1V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 545pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 399 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1017325-AOWF11S60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOWF11S60 CAD Model

Description

The Alpha & Omega Semiconductor Inc. N-Channel MOSFET is a discrete semiconductor product designed for use in a wide range of applications.

  • Channel Type: N-Channel
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.1V @ 250μA
  • Maximum Gate Charge: 11nC @ 10V
  • Maximum Input Capacitance: 545pF @ 100V
  • Maximum Rds On: 399 mOhm @ 3.8A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8561 $64.9635
80+ $1.5223 $121.7840
120+ $1.4749 $176.9880
165+ $1.4276 $235.5540
210+ $1.3802 $289.8420
285+ $1.2370 $352.5450
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