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Same model may have multiple batches, images only for reference.
AOY2N60 Real Image
Same model may have multiple batches, images only for reference.

AOY2N60

Part No AOY2N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH
Datasheet
AOY2N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 295pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 4.7 Ohm @ 1A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1017337-AOY2N60
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOY2N60 CAD Model

Description

The AOY2N60 from Alpha & Omega Semiconductor Inc. is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 2A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 11nC @ 10V
  • Package: TO-251
  • Operating Temperature Range: -50°C to 150°C (TJ)
  • Maximum Power Dissipation: 57W (Tc)
  • Maximum Rds On @ Id,Vgs: 4.7 Ohm @ 1A, 10V
  • Popularity: Medium
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3568 $58.8720
395+ $0.2928 $115.6560
615+ $0.2837 $174.4755
845+ $0.2746 $232.0370
1,090+ $0.2653 $289.1770
1,460+ $0.2379 $347.3340
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Availability: 32,400 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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