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Same model may have multiple batches, images only for reference.
SPB100N08S2-07 Real Image
Same model may have multiple batches, images only for reference.

SPB100N08S2-07

Part No SPB100N08S2-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A D2PAK
Datasheet
SPB100N08S2-07 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 6020pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 66A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101475-SPB100N08S2-07
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB100N08S2-07 CAD Model

Description

The Infineon Technologies 1101475-SPB100N08S2-07 is a N-channel MOSFET transistor that comes with a drain-source breakdown voltage of 75V and a continuous drain current of 100A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Maximum Rds On: 6.8 mOhm @ 66A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 200nC @ 10V
  • Maximum Input Capacitance: 6020pF @ 25V
  • Case/Package: PG-TO263-3-2
  • Mounting Type: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, SMD (SMT)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Product Category: Discrete Semiconductor Products

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