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Same model may have multiple batches, images only for reference.
2N6468 Seme LAB
Same model may have multiple batches, images only for reference.

2N6468

Part No 2N6468
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Single
Description TRANSISTOR
Datasheet
2N6468 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Central Semiconductor Corp
Package Bulk
Product Status Obsolete
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 120 V
Vce Saturation (Max) @ Ib, Ic 4V @ 800mA, 4A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1.5A, 4V
Power - Max 40 W
Frequency - Transition 5MHz
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Supplier Device Package TO-66
Standard Package 1 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 541457-2N6468
Ultra Librarian 3D Model Ultra Librarian 2N6468 CAD Model

Description

The 2N6468 is a bipolar transistor designed for general purpose amplifier and switching applications. 2N6468.

  • Applications: General Purpose Amplifier and Switching
  • Maximum Power Dissipation: 40W
  • Maximum Collector-Emitter Breakdown Voltage: 120V
  • Maximum Collector Current: 4A
  • Vce Saturation: 4V @ a Base Current of 800mA and Collector Current of 4A
  • DC Current Gain: 15 @ a Collector Current of 1.5A and a Vce of 4V
  • Operating Temperature Range: -65°C to 200°C
  • Mounting Type: Through-Hole
  • Package: TO-213AA, TO-66-2
  • Status: Obsolete

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