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Same model may have multiple batches, images only for reference.
CMPDM7002AHC TR Real Image
Same model may have multiple batches, images only for reference.

CMPDM7002AHC TR

Part No CMPDM7002AHC TR
Manufacturer Central Semiconductor Corp
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.28A SOT-23
Datasheet
CMPDM7002AHC TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Central Semiconductor Corp
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 2.3nC @ 4.5V
Max Input Capacitance 240pF @ 25V
Maximum Gate-Source Voltage 20V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 500mA, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1029677-CMPDM7002AHC TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CMPDM7002AHC TR CAD Model

Description

The Central Semiconductor Corp CMPDM7002AHC TR is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 1A @ 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 1A @ 25°C
  • Maximum Gate-Source Voltage: 20V
  • Maximum Rds On: 220 mOhm @ 500mA, 10V
  • Package: SOT-23
  • Maximum Gate Charge: 2.3nC @ 4.5V
  • Supply and Demand Status: Balanced

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