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CY14B104LA-BA25XIT

Part No CY14B104LA-BA25XIT
Manufacturer Cypress Semiconductor Corp
Catalog IT infrastructure Memory
Description nvSRAM 512kx8
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1455511-CY14B104LA-BA25XIT
Manufacturer Cypress Semiconductor Corp
Package Tape & Reel (TR)
Product Status Active
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 4Mbit
Memory Organization 512K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-FBGA (6x10)
Ultra Librarian 3D Model Ultra Librarian CY14B104LA-BA25XIT CAD Model

Description

The CY14B104LA-BA25XIT by Cypress Semiconductor, a component known for its combination of non-volatile elements with the speed of Static Random-Access Memory (SRAM), offers a unique memory solution of 512kx8 bits nvSRAM. This design ensures data retention even after power loss, making it highly suitable for critical data storage applications in automotive, industrial control systems, and portable electronics. With its built-in quantum trap storage mechanism, the CY14B104LA-BA25XIT guarantees long-term data retention without the need for an external battery. This nvSRAM module provides fast access times, comparable to traditional SRAM, but with the added advantage of non-volatility, ensuring immediate data protection upon power failure. Cypress’s technology enables this chip to seamlessly integrate into systems requiring robust memory solutions, without compromising on speed or reliability. Its energy-efficient design and small footprint make it an excellent choice for designers aiming to optimize their systems for performance and durability.

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