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Same model may have multiple batches, images only for reference.
CY7C1049CV33-10ZI Cypress Semiconductor Corp
Same model may have multiple batches, images only for reference.

CY7C1049CV33-10ZI

Part No CY7C1049CV33-10ZI
Manufacturer Cypress Semiconductor Corp
Catalog OEM Parts (C - E)
Description STANDARD SRAM / SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10 ns 44-TSOP II
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Package Bulk
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mb (512K x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 3V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Base Product Number CY7C1049
RoHS Status RoHS non-compliant
MSL Level 3 (168 Hours)
REACH Status REACH Affected
ECCN 3A991B2A
HTSUS 8542.32.0041
Other Names CYPCYPCY7C1049CV33-10ZI,2156-CY7C1049CV33-10ZI
Standard Package 1
Win Source Part Number 1054206-CY7C1049CV33-10ZI
Ultra Librarian 3D Model Ultra Librarian CY7C1049CV33-10ZI CAD Model

Description

The CY7C1049CV33-10ZI is a 4Mb (512K x 8) SRAM - Asynchronous Volatile Memory from Cypress Semiconductor Corp. This memory has an access time of 10 ns and operates on a voltage supply of 3V to 3.6V.

  • Memory Size: 4Mb (512K x 8)
  • Access Time: 10 ns
  • Voltage Supply: 3V to 3.6V
  • Package/Case: 44-TSOP (0.400", 10.16mm Width)
  • Memory Interface: Parallel
  • Write Cycle Time: 10ns
  • ECCN: 3A991B2A
  • REACH Affected: Yes
  • HTSUS Code: 8542.32.0041

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