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2N7002T-7-F

Part No 2N7002T-7-F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 115MA SOT-523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 7.5 Ohm @ 50mA, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-523
Dimension SOT-523
Win Source Part Number 005730-2N7002T-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name 2N7002T
Introduction Date December 23, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian 2N7002T-7-F CAD Model

Description

Product Overview: 2N7002T-7-F from Diodes Incorporated

The 2N7002T-7-F, manufactured by Diodes Incorporated, is a high-performance, small-signal N-Channel MOSFET that offers efficient power control in a compact SOT-523 package. This product is designed to meet the needs of a wide range of applications, including power management, load switching, and small signal amplification, making it a versatile component for designers and engineers.

Key Features

  • Low On-Resistance: The 2N7002T-7-F features a low on-resistance of typically 1.2Ω at V<sub>GS = 4.5V, which enhances its efficiency in conducting applications by reducing power loss.
  • High-Speed Switching: With fast switching speeds, this MOSFET is ideal for high-frequency applications, ensuring minimal transition losses and improved performance.
  • Low Threshold Voltage: A low threshold voltage allows this device to be driven by low-voltage control signals, making it suitable for interfacing with microcontrollers and other logic-level devices.
  • Enhanced Thermal Performance: The SOT-523 package provides excellent thermal performance for its size, allowing the device to handle higher currents without overheating.
  • Gate Protection: Built-in ESD protection helps to safeguard the gate against electrostatic discharge events, enhancing the reliability and longevity of the MOSFET.

Applications

The 2N7002T-7-F is commonly utilized in a variety of applications that require efficient power control, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Operated Systems
  • Motor Control
  • Relay and Solenoid Drivers
  • LED Lighting

Product Specifications

  • Drain-Source Voltage (V<sub>DSS): 60V
  • Continuous Drain Current (I<sub>D): 115mA
  • Power Dissipation (P<sub>D): 350mW
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-523
  • RoHS Compliant: Yes

The 2N7002T-7-F is a testament to Diodes Incorporated's commitment to providing high-quality, reliable semiconductor products. Whether for industrial, commercial, or consumer applications, this MOSFET is an excellent choice for designers looking for a balance of performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
910+ $0.0552 $50.2320
1,935+ $0.0517 $100.0395
3,010+ $0.0499 $150.1990
4,315+ $0.0464 $200.2160
5,595+ $0.0447 $250.0965
6,980+ $0.0430 $300.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 168,000 pieces
MOQ: 910 pcs
Order Increment : 1 pcs
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