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2N7002W-7-F

Part No 2N7002W-7-F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 115MA SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 7.5 Ohm @ 50mA, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 005735-2N7002W-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name 2N7002W
Introduction Date May 18, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian 2N7002W-7-F CAD Model

Description

Product Overview: 2N7002W-7-F by Diodes Incorporated

The 2N7002W-7-F, manufactured by Diodes Incorporated, is a high-performance, small-signal N-Channel MOSFET that offers efficient power control and switching. This MOSFET is designed to meet the stringent requirements of modern electronic circuits, providing a compact and energy-efficient solution for a variety of applications.

Key Features

  • Device Type: N-Channel MOSFET
  • Package: SOT-323, which is a small surface-mount package, ideal for space-constrained applications.
  • Drain-Source Voltage (V<sub>DS): 60V, providing a good voltage range for a variety of uses.
  • Continuous Drain Current (I<sub>D): 115 mA, suitable for moderate current applications.
  • R<sub>DS(on): Low on-resistance, which enhances the device's efficiency by minimizing power loss during operation.
  • Fast Switching Speed: Enables quick transitions between on and off states, improving performance in switching applications.
  • ESD Protected: Built-in electrostatic discharge protection for increased reliability and longevity of the component.

Applications

The versatility of the 2N7002W-7-F MOSFET allows it to be used in a wide range of applications, including but not limited to:

  • Power Management
  • Load Switching
  • Motor Control
  • DC-DC Converters
  • Battery Management Systems

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the 2N7002W-7-F is no exception. It is designed to meet the rigorous standards required by industrial, automotive, and consumer markets. The device's reliability is further ensured by its compliance with RoHS directives, indicating that it is free from hazardous substances commonly found in electronic components.

Conclusion

With its robust design, efficient performance, and versatility, the 2N7002W-7-F N-Channel MOSFET from Diodes Incorporated stands out as an excellent choice for designers and engineers looking to optimize their power control systems. Whether it's for intricate mobile devices, automotive applications, or industrial automation, this MOSFET is engineered to deliver reliable and efficient performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,770+ $0.0283 $50.0910
3,760+ $0.0266 $100.0160
5,840+ $0.0257 $150.0880
8,370+ $0.0239 $200.0430
10,870+ $0.0230 $250.0100
13,575+ $0.0221 $300.0075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 990,000 pieces
MOQ: 1770 pcs
Order Increment : 1 pcs
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