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BSS123-7

Part No BSS123-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170MA SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features N-Channel 100 V 170mA (Ta) 300mW (Ta) Surface Mount SOT-23-3
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number BSS123DITR, BSS1237, BSS123DICT
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 913610-BSS123-7
Ultra Librarian 3D Model Ultra Librarian BSS123-7 CAD Model

Description

The BSS123-7 from Diodes Incorporated is a high-performance, N-Channel enhancement mode field effect transistor (MOSFET) that offers excellent power control and efficiency for a wide range of applications. This small-signal MOSFET is designed for use in low-voltage, high-speed switching applications, including converters, inverters, and power management functions.

Featuring a compact SOT-23 package, the BSS123-7 is ideal for space-constrained applications while providing a low on-resistance and high switching speeds. The transistor is capable of handling a continuous drain current of 170mA, with a maximum drain-source voltage (V<sub>DS) of 100V, allowing for a broad range of operations in different circuit environments.

The BSS123-7 boasts a low input capacitance and gate charge, which reduces the total power loss during high-speed switching events, making it an energy-efficient choice for modern electronic designs. It also features a low threshold voltage, ensuring that it can be easily driven by low-voltage logic circuits, which is essential for battery-operated devices.

With its fast switching characteristics, the BSS123-7 is well-suited for high-frequency PWM (Pulse Width Modulation) applications, such as DC-DC converters, where efficiency and thermal performance are critical. Additionally, it provides robust thermal performance with a maximum junction temperature of 150°C, ensuring reliable operation even under strenuous conditions.

Diodes Incorporated has designed the BSS123-7 with an emphasis on reliability, including features such as high input impedance and a ruggedized device design to withstand high energy pulses in the avalanche and commutation modes. This makes the BSS123-7 a versatile component that can be used in a variety of industrial, commercial, and consumer electronics applications.

In summary, the BSS123-7 N-Channel MOSFET is a testament to Diodes Incorporated's commitment to providing high-quality, reliable semiconductor products. Its combination of low power consumption, high-speed switching, and compact form factor make it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,580+ $0.0194 $50.0520
6,250+ $0.0160 $100.0000
9,680+ $0.0155 $150.0400
13,335+ $0.0150 $200.0250
17,245+ $0.0145 $250.0525
23,080+ $0.0130 $300.0400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300,000 pieces
MOQ: 2580 pcs
Order Increment : 1 pcs
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