Product Overview: BSS84V-7 - P-Channel Enhancement Mode Field Effect Transistor
The BSS84V-7 is a high-performance P-Channel MOSFET from Diodes Incorporated, designed to cater to a wide range of power management applications. This MOSFET is a preferred choice for designers looking for a component that offers a balance between efficiency and reliability. It is commonly used in load switch and power management circuits due to its low on-resistance and high threshold voltage.
Key Features
- Low Power Loss/High Efficiency: With a low on-resistance of only 10 Ohms, the BSS84V-7 ensures minimal power loss during operation, leading to higher efficiency in electronic circuits.
- High Threshold Voltage: A threshold voltage of -0.8V typical at VGS = -4.5V makes this MOSFET suitable for a variety of applications that require a high gate threshold.
- Surface Mount Package: Packaged in a small SOT-23 form factor, the BSS84V-7 is ideal for space-constrained applications, allowing for high-density PCB layouts.
- Lead-Free and RoHS Compliant: In line with modern environmental standards, this product is completely lead-free and RoHS compliant, ensuring that it meets global regulatory requirements for environmental safety.
Applications
The BSS84V-7 is versatile and can be utilized in various applications, including:
- Power Management Functions
- DC/DC Converters
- Battery Management Systems
- Load Switching
- Portable Devices
Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
-60V |
| Gate-Source Voltage (VGS) |
±20V |
| Continuous Drain Current (ID) |
-130mA |
| Power Dissipation (PD) |
350mW |
| Junction Temperature (TJ) |
-55°C to +150°C |
With its robust performance and compact size, the BSS84V-7 from Diodes Incorporated is an excellent choice for designers seeking a reliable P-Channel MOSFET for their next project.