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BSS84V-7

Part No BSS84V-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 50V 0.13A SOT-563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 130mA
Maximum Rds On at Id,Vgs 10 Ohm @ 100mA, 5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 45pF @ 25V
Maximum Power Dissipation 150mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 079703-BSS84V-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS84V-7 CAD Model

Description

Product Overview: BSS84V-7 - P-Channel Enhancement Mode Field Effect Transistor

The BSS84V-7 is a high-performance P-Channel MOSFET from Diodes Incorporated, designed to cater to a wide range of power management applications. This MOSFET is a preferred choice for designers looking for a component that offers a balance between efficiency and reliability. It is commonly used in load switch and power management circuits due to its low on-resistance and high threshold voltage.

Key Features

  • Low Power Loss/High Efficiency: With a low on-resistance of only 10 Ohms, the BSS84V-7 ensures minimal power loss during operation, leading to higher efficiency in electronic circuits.
  • High Threshold Voltage: A threshold voltage of -0.8V typical at VGS = -4.5V makes this MOSFET suitable for a variety of applications that require a high gate threshold.
  • Surface Mount Package: Packaged in a small SOT-23 form factor, the BSS84V-7 is ideal for space-constrained applications, allowing for high-density PCB layouts.
  • Lead-Free and RoHS Compliant: In line with modern environmental standards, this product is completely lead-free and RoHS compliant, ensuring that it meets global regulatory requirements for environmental safety.

Applications

The BSS84V-7 is versatile and can be utilized in various applications, including:

  • Power Management Functions
  • DC/DC Converters
  • Battery Management Systems
  • Load Switching
  • Portable Devices

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) -60V
Gate-Source Voltage (VGS) ±20V
Continuous Drain Current (ID) -130mA
Power Dissipation (PD) 350mW
Junction Temperature (TJ) -55°C to +150°C

With its robust performance and compact size, the BSS84V-7 from Diodes Incorporated is an excellent choice for designers seeking a reliable P-Channel MOSFET for their next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
495+ $0.1020 $50.4900
1,050+ $0.0955 $100.2750
1,630+ $0.0922 $150.2860
2,340+ $0.0856 $200.3040
3,040+ $0.0823 $250.1920
3,800+ $0.0790 $300.2000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,036 pieces
MOQ: 495 pcs
Order Increment : 1 pcs
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