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DMG1012T-7

Part No DMG1012T-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 630MA SOT-523
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.74nC @ 4.5V
Max Input Capacitance 60.67pF @ 16V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 280mW (Ta)
Maximum Rds On at Id,Vgs 400 mOhm @ 600mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-523
Dimension SOT-523
Win Source Part Number 014369-DMG1012T-7
Family Name DMG1012T
Introduction Date July 07, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMG1012T-7 CAD Model

Description

DMG1012T-7 - N-Channel Enhancement Mode Field Effect Transistor

The DMG1012T-7 is a high-performance, N-Channel enhancement mode field effect transistor (FET) produced by Diodes Incorporated. This semiconductor device is designed to deliver efficient power control and switching capabilities in a compact SOT-523 package. With its low on-resistance and high-speed switching, the DMG1012T-7 is an ideal choice for a wide range of applications including load switch, power management, and other general-purpose switching applications.

Key Features

  • Low On-Resistance: The DMG1012T-7 offers a very low on-resistance, typically 1.2Ω at VGS = 4.5V, which enhances its efficiency by minimizing power loss during operation.
  • High-Speed Switching: This FET is capable of high-speed switching, which makes it suitable for high-frequency applications where rapid on-off cycles are crucial.
  • Low Threshold Voltage: A low threshold voltage ensures that the device can be easily driven by low-voltage control signals, making it compatible with modern low-voltage logic circuits.
  • Surface Mount Package: The SOT-523 package is designed for space-saving surface mount technology (SMT), which allows for high-density PCB layouts and compact device design.
  • Lead-Free and RoHS Compliant: The DMG1012T-7 meets environmental standards, being both lead-free and compliant with the Restriction of Hazardous Substances (RoHS) directive.

Applications

  • Power Management Circuits
  • Battery Powered Systems
  • DC-DC Converters
  • Load Switching
  • Portable Electronic Devices

The DMG1012T-7 is designed to meet the stringent requirements of modern electronic devices. Its robust construction and reliable performance make it a popular choice among engineers and designers for integrating into various circuits where efficient power handling is essential. Whether used in portable electronics, power supply units, or complex industrial systems, this N-Channel MOSFET from Diodes Incorporated stands out for its versatility and efficiency.

For detailed specifications and application notes, customers are advised to consult the official datasheet provided by Diodes Incorporated, which contains comprehensive information on the DMG1012T-7's electrical characteristics, thermal properties, and recommended operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,770+ $0.0283 $50.0910
3,760+ $0.0266 $100.0160
5,840+ $0.0257 $150.0880
8,370+ $0.0239 $200.0430
10,870+ $0.0230 $250.0100
13,575+ $0.0221 $300.0075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,000 pieces
MOQ: 1770 pcs
Order Increment : 1 pcs
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