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DMG2302UK-7

Part No DMG2302UK-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.8A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 20 V 2.8A (Ta) 660mW (Ta) Surface Mount SOT-23-3
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3
Family Name DMG2302
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number DMG2302UK-7DITR, DMG2302UK-7DICT, DMG2302UK-7DIDKR
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 844472-DMG2302UK-7
Ultra Librarian 3D Model Ultra Librarian DMG2302UK-7 CAD Model

Description

DMG2302UK-7 MOSFET by Diodes Incorporated

The DMG2302UK-7 is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is part of their extensive range of discrete, logic, and analog semiconductor components, tailored to provide efficient solutions for electronic circuits.

With its compact SOT-23 package, the DMG2302UK-7 is optimized for space-sensitive applications while offering robust electrical characteristics that make it suitable for a variety of switching and amplification tasks. The device features a drain-source voltage (V<sub>DS) of 20V, a continuous drain current (I<sub>D) of 3.9A, and a low threshold voltage (V<sub>GS(th)) which enhances its performance in low-voltage operations.

The DMG2302UK-7 boasts an R<sub>DS(on) as low as 70mΩ at V<sub>GS = 4.5V, which translates to reduced on-state resistance, thereby improving efficiency by minimizing conduction losses. This characteristic is particularly beneficial in power management applications, such as DC/DC converters, load switches, and power supply circuits, where energy conservation is paramount.

Furthermore, the DMG2302UK-7 incorporates advanced trench MOSFET technology, which allows for excellent switching performance and low gate charge (Q<sub>G). This technology is instrumental in achieving fast switching speeds, a critical factor in high-frequency circuits. The low capacitance and gate charge also enable the MOSFET to operate with less power dissipation, contributing to the overall system reliability and longevity.

Designed to be lead-free, halogen-free, and RoHS compliant, the DMG2302UK-7 is an environmentally friendly choice for designers who are conscious about ecological impacts. Its high reliability and operational stability are backed by Diodes Incorporated's commitment to quality, making it an ideal choice for both commercial and industrial applications.

In summary, the DMG2302UK-7 from Diodes Incorporated is a versatile, efficient, and reliable component that is well-suited for a wide array of electronic designs requiring high-speed switching and low power losses.

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Pricing & Ordering

Quantity Unit Price Ext. Price
965+ $0.0519 $50.0835
2,060+ $0.0486 $100.1160
3,195+ $0.0470 $150.1650
4,580+ $0.0437 $200.1460
5,940+ $0.0421 $250.0740
7,430+ $0.0404 $300.1720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,970 pieces
MOQ: 965 pcs
Order Increment : 1 pcs
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