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DMG4812SSS-13

Part No DMG4812SSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8A 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 18.5nC @ 10V
Max Input Capacitance 1849pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 1.54W (Ta)
Maximum Rds On at Id,Vgs 15 mOhm @ 10.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 110016-DMG4812SSS-13
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian DMG4812SSS-13 CAD Model

Description

The DMG4812SSS-13 is a cutting-edge, high-performance MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to cater to a wide array of applications, ranging from power management to switching circuits, where efficiency and reliability are of paramount importance.

Key Features

  • Low On-Resistance: The DMG4812SSS-13 boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced power loss and enhanced energy efficiency during operation.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant amounts of current without compromising on performance, making it suitable for high-power applications.
  • Advanced Power Dissipation: Its superior power dissipation capabilities ensure that the device operates reliably even under stressful conditions, contributing to the longevity of the application it is used in.
  • Low Threshold Voltage: The low threshold voltage (V<sub>GS(th)) allows for the MOSFET to be easily driven at lower gate voltages, which is beneficial for low-voltage applications.
  • Fast Switching Speed: The MOSFET's fast switching speed is ideal for applications that require rapid switching, such as power converters and motor drives.

Applications

The versatility of the DMG4812SSS-13 MOSFET makes it suitable for a broad range of applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Motor Control Circuits
  • Load Switches
  • Battery Management Systems
  • Switch Mode Power Supplies (SMPS)

Package and Quality Assurance

The DMG4812SSS-13 is available in a compact SOT-363 package, which is not only space-efficient but also offers excellent thermal performance. Diodes Incorporated is committed to delivering high-quality products, and this MOSFET is no exception. It is produced under strict quality control standards, ensuring that each unit meets the rigorous requirements of the industry and provides reliable performance in your applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9013 $58.5845
160+ $0.7396 $118.3360
245+ $0.7165 $175.5425
335+ $0.6934 $232.2890
435+ $0.6703 $291.5805
580+ $0.6010 $348.5800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 41,900 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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