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DMG6602SVTX-7

Part No DMG6602SVTX-7
Manufacturer Diodes Incorporated
Catalog TRANSISTORS
Description MOSFET N/P-CH 30V 3.4A TSOT26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Category Discrete Semiconductor Products >Transistors FETs, MOSFETs FET, MOSFET Arrays
Part Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V, 420pF @ 15V
Power - Max 840mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26
Win Source Part Number WS1310105-DMG6602SVTX-7
Ultra Librarian 3D Model Ultra Librarian DMG6602SVTX-7 CAD Model

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

• Backlighting • DC-DC Converters • Power Management Functions

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2779 $50.0220
440+ $0.2280 $100.3200
680+ $0.2209 $150.2120
940+ $0.2138 $200.9720
1,215+ $0.2066 $251.0190
1,620+ $0.1853 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,524 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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