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DMG6968U-7

Part No DMG6968U-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6.5A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 8.5nC @ 4.5V
Max Input Capacitance 151pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 6.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 014392-DMG6968U-7
Family Name DMG6968U
Introduction Date August 10, 1999
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian DMG6968U-7 CAD Model

Description

Introducing the DMG6968U-7 MOSFET from Diodes Incorporated

The DMG6968U-7 is a high-performance, N-Channel enhancement mode field effect transistor (MOSFET) designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This compact and efficient MOSFET is part of Diodes Incorporated's extensive range of power management devices, tailored to meet the needs of modern electronic applications.

With its ultra-small SOT-23 package, the DMG6968U-7 is perfect for space-constrained applications, offering a minimal footprint on printed circuit boards (PCBs) without compromising on performance. This MOSFET is characterized by its low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses, enhancing overall energy efficiency in a variety of applications such as power management, load switching, and DC-DC conversion.

The DMG6968U-7 boasts a 30V drain-source breakdown voltage (V<sub>DSS), which makes it suitable for a range of intermediate voltage operations. It also features a continuous drain current (I<sub>D) of up to 9.4A, allowing it to handle high current loads efficiently. The device's fast switching capabilities are complemented by its low threshold voltage, ensuring quick turn-on and turn-off times, which is critical for high-speed circuit operation.

Designed with reliability in mind, the DMG6968U-7 includes built-in thermal and electrical safeguards. Its maximum R<sub>DS(on) is specified with a ±20V gate-source voltage (V<sub>GS), providing designers with a robust and durable component that can withstand the rigors of demanding electronic environments.

For engineers and designers looking for a MOSFET that offers both space savings and high efficiency, the DMG6968U-7 from Diodes Incorporated is an ideal choice. Its combination of low on-resistance, high current capability, and fast switching speed makes it a versatile component for a wide array of power management tasks.

Whether you're designing power supplies, motor controllers, or any other application requiring a high-performance MOSFET, the DMG6968U-7 delivers the quality and reliability that Diodes Incorporated is known for.

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Pricing & Ordering

Quantity Unit Price Ext. Price
580+ $0.0863 $50.0540
1,415+ $0.0708 $100.1820
2,190+ $0.0686 $150.2340
3,015+ $0.0664 $200.1960
3,895+ $0.0642 $250.0590
5,220+ $0.0575 $300.1500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 62,745 pieces
MOQ: 580 pcs
Order Increment : 1 pcs
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