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DMN10H100SK3-13

Part No DMN10H100SK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 18A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 25.2nC @ 10V
Max Input Capacitance 1172pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1033709-DMN10H100SK3-13
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMN10H100SK3-13 CAD Model

Description

Product Overview: DMN10H100SK3-13 from Diodes Incorporated

The DMN10H100SK3-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of the Diodes Incorporated's extensive range of power management devices, which are renowned for their reliability and efficiency.

The DMN10H100SK3-13 is built using advanced trench MOSFET technology, which ensures that the device operates with low on-resistance and a high switching performance. This makes it an ideal choice for a wide range of power applications, including power supplies, DC-DC converters, and load switches, among others.

Key Features

  • Low On-Resistance: The DMN10H100SK3-13 boasts an extremely low on-resistance, which minimizes conduction losses and improves overall efficiency.
  • High-Speed Switching: With fast switching capabilities, this MOSFET reduces switching losses and is suitable for high-frequency power switching applications.
  • High Continuous Drain Current: It supports a high continuous drain current, making it capable of handling high power levels without performance degradation.
  • Thermal Management: The device is encapsulated in a DFN2020 package, which offers excellent thermal resistance and helps in maintaining optimal operating temperatures.

Applications

The DMN10H100SK3-13 is versatile and can be used in various applications that require efficient power management. Some of the typical applications include:

  • Power supply units
  • DC-DC converters
  • Battery management systems
  • Motor drives
  • Load switches

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products that meet the stringent requirements of the electronics industry. The DMN10H100SK3-13 is manufactured with this commitment in mind, ensuring reliability and performance consistency. It is RoHS compliant and adheres to international manufacturing standards, guaranteeing both environmental friendliness and the safety of use in various consumer and industrial applications.

For designers and engineers looking for a robust and efficient power management solution, the DMN10H100SK3-13 from Diodes Incorporated presents an excellent option that combines performance with reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3610 $50.5400
300+ $0.3381 $101.4300
460+ $0.3267 $150.2820
660+ $0.3039 $200.5740
855+ $0.2924 $250.0020
1,070+ $0.2810 $300.6700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,497 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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